Magnetic field effects on spin relaxation in heterostructures

Effect of magnetic field on electron spin relaxation in quantum wells is studied theoretically. We have shown that Larmor effect and cyclotron motion of carriers can either jointly suppress D'yakonov-Perel' spin relaxation or compensate each other. The spin relaxation rates tensor is derived for any given direction of the external field and arbitrary ratio of bulk and structural contributions to spin splitting. Our results are applied to the experiments on electron spin resonance in SiGe heterostructures, and enable us to extract spin splitting value for such quantum wells.Comment: 6 pages, 4 figure

Introduction to spin physics in semiconductors

This lecture presents a brief survey of spin physics in semiconductors together with the historic roots of the recent activity in investigating spin-related phenomena

Spin relaxation and antisymmetric exchange in n-doped III-V semiconductor

Recently K. Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in $n$-doped GaAs in the regime close to the metal-insulator transition. We derive the correct spin Hamiltonian and apply it to the determination of spin dephasing time using the method of moments expansion. We argue that the proposed mechanism is insufficient to explain the observed values of the spin relaxation time.Comment: 5 pages, 1 figure

Low-temperature spin relaxation in n-type GaAs

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is observed in the dependence of the spin lifetime on doping near n_D = 2x10^16 cm^{-3}. In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interactio

Anisotropic exchange interaction of localized conduction-band electrons in semiconductor structures

The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor structures which are not symmetric with respect to spatial inversion, for instance in bulk zinc-blend semiconductors. The interaction has both symmetric and antisymmetric parts with respect to permutation of spin components. The antisymmetric (Dzyaloshinskii-Moriya) interaction is the strongest one. It contributes significantly into spin relaxation of localized electrons; in particular, it governs low-temperature spin relaxation in n-GaAs with the donor concentration near 10^16cm-3. The interaction must be allowed for in designing spintronic devices, especially spin-based quantum computers, where it may be a major source of decoherence and errors

Exact asymptotic form of the exchange interactions between shallow centers in doped semiconductors

The method developed in [L. P. Gor'kov and L. P. Pitaevskii, Sov. Phys. Dokl. 8, 788 (1964); C. Herring and M. Flicker, Phys. Rev. 134, A362 (1964)] to calculate the asymptotic form of exchange interactions between hydrogen atoms in the ground state is extended to excited states. The approach is then applied to shallow centers in semiconductors. The problem of the asymptotic dependence of the exchange interactions in semiconductors is complicated by the multiple degeneracy of the ground state of an impurity (donor or acceptor) center in valley or band indices, crystalline anisotropy and strong spin-orbital interactions, especially for acceptor centers in III-V and II-VI groups semiconductors. Properties of two coupled centers in the dilute limit can be accessed experimentally, and the knowledge of the exact asymptotic expressions, in addition to being of fundamental interest, must be very helpful for numerical calculations and for interpolation of exchange forces in the case of intermediate concentrations. Our main conclusion concerns the sign of the magnetic interaction -- the ground state of a pair is always non-magnetic. Behavior of the exchange interactions in applied magnetic fields is also discussed

Quantum interference effects in p-Si1−xGex quantum wells

Quantum interference effects, such as weak localization and electronelectron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−xGex quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field

Magnetic-field dependence of electron spin relaxation in n-type semiconductors

We present a theoretical investigation of the magnetic field dependence of the longitudinal ($T_1$) and transverse ($T_2$) spin relaxation times of conduction band electrons in n-type III-V semiconductors. In particular, we find that the interplay between the Dyakonov-Perel process and an additional spin relaxation channel, which originates from the electron wave vector dependence of the electron $g$-factor, yields a maximal $T_2$ at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic field dependence of electron spin lifetimes.Comment: accepted for publication in PRB, minor changes to previous manuscrip

Electron spin evolution induced by interaction with nuclei in a quantum dot

We study the decoherence of a single electron spin in an isolated quantum dot induced by hyperfine interaction with nuclei for times smaller than the nuclear spin relaxation time. The decay is caused by the spatial variation of the electron envelope wave function within the dot, leading to a non-uniform hyperfine coupling $A$. We show that the usual treatment of the problem based on the Markovian approximation is impossible because the correlation time for the nuclear magnetic field seen by the electron spin is itself determined by the flip-flop processes. The decay of the electron spin correlation function is not exponential but rather power (inverse logarithm) law-like. For polarized nuclei we find an exact solution and show that the precession amplitude and the decay behavior can be tuned by the magnetic field. The decay time is given by $\hbar N/A$, where $N$ is the number of nuclei inside the dot. The amplitude of precession, reached as a result of the decay, is finite. We show that there is a striking difference between the decoherence time for a single dot and the dephasing time for an ensemble of dots.Comment: Revtex, 11 pages, 5 figure

Bremsstrahlung radiation by a tunneling particle

We study the bremsstrahlung radiation of a tunneling charged particle in a time-dependent picture. In particular, we treat the case of bremsstrahlung during alpha-decay, which has been suggested as a promissing tool to investigate the problem of tunneling times. We show deviations of the numerical results from the semiclassical estimates. A standard assumption of a preformed particle inside the well leads to sharp high-frequency lines in the bremsstrahlung emission. These lines correspond to "quantum beats" of the internal part of the wavefunction during tunneling arising from the interference of the neighboring resonances in the well.Comment: 4 pages, 4 figure